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TH58BYG2S3HBAI6

Part No :

TH58BYG2S3HBAI6

Manufacturer
Kioxia America, Inc.
Description
IC FLASH 4GBIT PARALLEL 67VFBGA
Catalog
Memory
DataSheet
TH58BYG2S3HBAI6 PDF
Unit Price
詢價QQ咨詢
Stock Num
312
Min Qty
1
Series
Benand?
Package
Tray

TH58BYG2S3HBAI6 Specifications

Type Description
rohs: RoHS
technology: FLASH - NAND (SLC)
access time: 25 ns
memory size: 4Gb (512M x 8)
memory type: Non-Volatile
part status: Active
memory format: FLASH
mounting type: Surface Mount
package / case: 67-VFBGA
clock frequency: -
memory interface: Parallel
voltage - supply: 1.7V ~ 1.95V
operating temperature: -40°C ~ 85°C (TA)
supplier device package: 67-VFBGA (6.5x8)
write cycle time - word, page: 25ns