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BS2101F-E2

Type	Description
rohs:	RoHS
gate type:	IGBT, N-Channel MOSFET
input type:	Non-Inverting
part status:	Not For New Designs
channel type:	Synchronous
mounting type:	Surface Mount
package / case:	8-SOIC (0.173", 4.40mm Width)
voltage - supply:	10V ~ 18V
number of drivers:	2
driven configuration:	High-Side or Low-Side
operating temperature:	-40°C ~ 125°C (TA)
rise / fall time (typ):	60ns, 20ns
supplier device package:	8-SOP
logic voltage - vil, vih:	1V, 2.6V
high side voltage - max (bootstrap):	600 V
current - peak output (source, sink):	60mA, 130mA