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L6389ED

Type	Description
rohs:	RoHS
gate type:	IGBT, N-Channel, P-Channel MOSFET
input type:	Inverting
part status:	Active
channel type:	Independent
mounting type:	Surface Mount
package / case:	8-SOIC (0.154", 3.90mm Width)
voltage - supply:	17V (Max)
number of drivers:	2
driven configuration:	Half-Bridge
operating temperature:	-45°C ~ 125°C (TJ)
rise / fall time (typ):	70ns, 40ns
supplier device package:	8-SOIC
logic voltage - vil, vih:	1.1V, 1.8V
high side voltage - max (bootstrap):	600 V
current - peak output (source, sink):	400mA, 650mA

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