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HIP2101IR4ZT

Type	Description
rohs:	RoHS
gate type:	N-Channel MOSFET
input type:	Non-Inverting
part status:	Active
channel type:	Independent
mounting type:	Surface Mount
package / case:	12-VFDFN Exposed Pad
voltage - supply:	9V ~ 14V
number of drivers:	2
driven configuration:	Half-Bridge
operating temperature:	-55°C ~ 150°C (TJ)
rise / fall time (typ):	10ns, 10ns
supplier device package:	12-DFN (4x4)
logic voltage - vil, vih:	0.8V, 2.2V
high side voltage - max (bootstrap):	114 V
current - peak output (source, sink):	2A, 2A